Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires
Identifieur interne : 000855 ( Main/Repository ); précédent : 000854; suivant : 000856Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires
Auteurs : RBID : Pascal:13-0365685Descripteurs français
- Pascal (Inist)
- Nanostructure, Semiconducteur III-V, Composé III-V, Superréseau, Nanofil, Nanomatériau, Mécanisme croissance, Microscopie électronique transmission, Microscopie électronique, Photoluminescence, Résolution spatiale, Inclusion, Facettage, Défaut empilement, Structure blende, Interface, Réseau cubique, Bicouche, Dislocation interfaciale, Fissure, Hétérostructure, Analyse phase, Déformation élastique, Energie déformation, Propriété mécanique, Déformation plane, Contrainte traction, Diffusion(transport), Indium, Simulation numérique, Adatome, InGaN, GaN, 6865, 6146, 8107V, 8107B.
English descriptors
- KwdEn :
- Adatoms, Bilayers, Blende structure, Cracks, Cubic lattices, Diffusion, Digital simulation, Elastic deformation, Electron microscopy, Faceting, Growth mechanism, Heterostructures, III-V compound, III-V semiconductors, Inclusions, Indium, Interfaces, Mechanical properties, Misfit dislocations, Nanostructured materials, Nanostructures, Nanowires, Phase analysis, Photoluminescence, Plane strain, Spatial resolution, Stacking faults, Strain energy, Superlattices, Tensile stress, Transmission electron microscopy.
Abstract
The structural properties and the strain state of InGaN/GaN superlattices embedded in GaN nanowires were analyzed as a function of superlattice growth temperature, using complementary transmission electron microscopy techniques supplemented by optical analysis using photoluminescence and spatially resolved microphotoluminescence spectroscopy. A truncated pyramidal shape was observed for the 4 nm thick InGaN inclusions, where their (0001) central facet was delimited by six-fold {101